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Effect of extreme ultraviolet photoresist underlayer optical properties on imaging performance

Title
Effect of extreme ultraviolet photoresist underlayer optical properties on imaging performance
Author
안진호
Keywords
EUV; LITHOGRAPHY; MODEL
Issue Date
2015-11
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 33, NO 6, Page. 1-4
Abstract
An extreme ultraviolet lithography (EUVL) suffers from the trade-off relationship among resolution, line edge roughness, and sensitivity, which is a natural limitation for chemically amplified resists. Thus, the performance of photoresist needs to be assisted by the other materials, and the resist underlayer is one of them. Using a lithography simulation tool, the authors show that the standing wave effect can also occur in the EUVL process and is dependent on the pattern pitch ratio. Although underlayers with a lower refractive index exhibit reduced in-plane line edge roughness, the difference between the refractive index of the underlayer and photoresist should be maintained below 5% in order to optimize performance. (C) 2015 American Vacuum Society.
URI
http://avs.scitation.org/doi/10.1116/1.4936121http://hdl.handle.net/20.500.11754/28706
ISSN
1071-1023
DOI
10.1116/1.4936121
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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