Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진섭 | - |
dc.date.accessioned | 2017-08-10T07:21:49Z | - |
dc.date.available | 2017-08-10T07:21:49Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.citation | NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v. 7, NO 9, Page. 708-712 | en_US |
dc.identifier.issn | 1941-4900 | - |
dc.identifier.issn | 1941-4919 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/nnl/2015/00000007/00000009/art00004 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28457 | - |
dc.description.abstract | We investigated the structural and electrical characteristics of graphene after O-2 plasma treatment and H-2 annealing, and we further studied the effects of these treatments on the device performance of AlGaN/GaN Schottky diodes. Raman spectroscopy revealed that increasing O-2 plasma power during treatment enhanced the D-band to G-band intensity ratio. Atomic force microscopy and X-ray photoelectron spectroscopy revealed variation in surface morphology and a shift in carbon and oxygen binding energies, respectively, which correlated an increase in the sheet resistance of graphene. The current-voltage (I-V) characteristics of AlGaN/GaN Schottky diodes demonstrated degradation of electrical properties after O-2 plasma treatment. After H-2 annealing, the I-V curves of Schottky diodes recovered due to improvement in the structural and electrical properties of graphene damaged during O-2 plasma treatment. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2015R1A1A05027848). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | ALGAN/GAN | en_US |
dc.subject | GRAPHENE | en_US |
dc.subject | OHMIC CONTACT | en_US |
dc.subject | SCHOTTKY DIODES | en_US |
dc.title | Effects of Plasma Treatment on the Electrical Properties of AlGaN/GaN Schottky Diodes with Graphene/Ni/Au Electrodes | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1166/nnl.2015.2015 | - |
dc.relation.page | 708-712 | - |
dc.relation.journal | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.contributor.googleauthor | Han, Sanghoo | - |
dc.contributor.googleauthor | Cho, Inje | - |
dc.contributor.googleauthor | Kim, Hyung | - |
dc.contributor.googleauthor | Mageshwari, Kandhasamy | - |
dc.contributor.googleauthor | Park, Jinsub | - |
dc.relation.code | 2015008096 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jinsubpark | - |
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