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Effects of Plasma Treatment on the Electrical Properties of AlGaN/GaN Schottky Diodes with Graphene/Ni/Au Electrodes

Title
Effects of Plasma Treatment on the Electrical Properties of AlGaN/GaN Schottky Diodes with Graphene/Ni/Au Electrodes
Author
박진섭
Keywords
ALGAN/GAN; GRAPHENE; OHMIC CONTACT; SCHOTTKY DIODES
Issue Date
2015-10
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v. 7, NO 9, Page. 708-712
Abstract
We investigated the structural and electrical characteristics of graphene after O-2 plasma treatment and H-2 annealing, and we further studied the effects of these treatments on the device performance of AlGaN/GaN Schottky diodes. Raman spectroscopy revealed that increasing O-2 plasma power during treatment enhanced the D-band to G-band intensity ratio. Atomic force microscopy and X-ray photoelectron spectroscopy revealed variation in surface morphology and a shift in carbon and oxygen binding energies, respectively, which correlated an increase in the sheet resistance of graphene. The current-voltage (I-V) characteristics of AlGaN/GaN Schottky diodes demonstrated degradation of electrical properties after O-2 plasma treatment. After H-2 annealing, the I-V curves of Schottky diodes recovered due to improvement in the structural and electrical properties of graphene damaged during O-2 plasma treatment.
URI
http://www.ingentaconnect.com/content/asp/nnl/2015/00000007/00000009/art00004http://hdl.handle.net/20.500.11754/28457
ISSN
1941-4900; 1941-4919
DOI
10.1166/nnl.2015.2015
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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