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Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

Title
Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots
Author
김태환
Keywords
Nonvolatile memory; polymethylsilsesquioxane; CdSe/ZnS quantum dot; electrical bistability; conduction mechanisms
Issue Date
2015-10
Publisher
SPRINGER
Citation
JOURNAL OF ELECTRONIC MATERIALS, v. 44, NO 10, Page. 3962-3966
Abstract
Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current-voltage (I-V) curves showed a bistable current behavior and the presence of hysteresis. The current-time (I-t) curves showed that the fabricated NVM memory devices were stable up to 1 x 10(4) s with a distinct ON/OFF ratio of 10(4) and were reprogrammable when the endurance test was performed. The extrapolation of the I-t curve to 10(5) s with corresponding current ON/OFF ratio 1 x 10(5) indicated a long performance stability of the NVM devices. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and Child-Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics.
URI
https://link.springer.com/article/10.1007%2Fs11664-015-3872-8http://hdl.handle.net/20.500.11754/28398
ISSN
0361-5235; 1543-186X
DOI
10.1007/s11664-015-3872-8
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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