Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2017-08-04T05:02:29Z | - |
dc.date.available | 2017-08-04T05:02:29Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, no. 10, Page. 7493-7497 | en_US |
dc.identifier.issn | 15334880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00013 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28296 | - |
dc.description.abstract | In the present work, we report a Cu-Mn alloy as a material for the self-forming barrier process, and we investigated the diffusion barrier properties of the self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films with 3.8 at% Mn were directly deposited onto low-k dielectrics by co-sputtering followed by annealing at various temperatures. The self-formed layers were investigated by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). In order to compare barrier properties between the Mn-based self-formed layer on low-k dielectric with UV curing and the interlayer on low-k dielectric without UV curing, thermal stability was measured at various thermal stress temperatures. Our results indicated that the formation of the barrier at the interface of Cu Mn alloy/low-k dielectric was enhanced by UV curing due to changes in the porosity and C concentration in the dielectric layer. | en_US |
dc.description.sponsorship | This work was performed with the support of the Samsung Electronics Co. The authors would also like to acknowledge the operators at the IndustryUniversity Cooperation Foundation of Hanyang University for their assistance in TEM analysis. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Copper Interconnect | en_US |
dc.subject | Self-Forming Barrier | en_US |
dc.subject | Copper-manganese alloy | en_US |
dc.subject | Low-k dielectric | en_US |
dc.title | Characterization of Mn-Based Self-Forming Barriers on Low-k Samples With or Without UV Curing Treatment | en_US |
dc.type | Article | en_US |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1166/jnn.2015.11145 | - |
dc.relation.page | 7493-7497 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Park, Jae-Hyung | - |
dc.contributor.googleauthor | Kang, Min-Soo | - |
dc.contributor.googleauthor | Han, Dong-Suk | - |
dc.contributor.googleauthor | Choi, Duck-Kyun | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.relation.code | 2015003357 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
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