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Characterization of Mn-Based Self-Forming Barriers on Low-k Samples With or Without UV Curing Treatment

Title
Characterization of Mn-Based Self-Forming Barriers on Low-k Samples With or Without UV Curing Treatment
Author
박종완
Keywords
Copper Interconnect; Self-Forming Barrier; Copper-manganese alloy; Low-k dielectric
Issue Date
2015-10
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, no. 10, Page. 7493-7497
Abstract
In the present work, we report a Cu-Mn alloy as a material for the self-forming barrier process, and we investigated the diffusion barrier properties of the self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films with 3.8 at% Mn were directly deposited onto low-k dielectrics by co-sputtering followed by annealing at various temperatures. The self-formed layers were investigated by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). In order to compare barrier properties between the Mn-based self-formed layer on low-k dielectric with UV curing and the interlayer on low-k dielectric without UV curing, thermal stability was measured at various thermal stress temperatures. Our results indicated that the formation of the barrier at the interface of Cu Mn alloy/low-k dielectric was enhanced by UV curing due to changes in the porosity and C concentration in the dielectric layer.
URI
http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00013http://hdl.handle.net/20.500.11754/28296
ISSN
15334880; 1533-4899
DOI
10.1166/jnn.2015.11145
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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