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dc.contributor.author박종완-
dc.date.accessioned2017-08-04T04:58:50Z-
dc.date.available2017-08-04T04:58:50Z-
dc.date.issued2015-10-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, Page. 7606-7610en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00038-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/28295-
dc.description.abstractWe investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm(2)/Vs, and a high I-ON/I-OFF ratio over 10(8).en_US
dc.description.sponsorshipThis work was supported by the Basic Science Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2014M2B2A4029604).en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectThin Film Transistors (TFTs)en_US
dc.subjectHafnium-Tin Oxide (HTO)en_US
dc.subjectHafnium-Zinc-Tin Oxide (HZTO)en_US
dc.subjectPositive Bias Temperature Stability (PBTS)en_US
dc.titleImprovement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Dopingen_US
dc.typeArticleen_US
dc.relation.volume15-
dc.identifier.doi10.1166/jnn.2015.11155-
dc.relation.page7606-7610-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorHan, Dongsuk-
dc.contributor.googleauthorPark, Jaehyung-
dc.contributor.googleauthorKang, Minsoo-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.contributor.googleauthorPark, Jongwan-
dc.relation.code2015003357-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjwpark-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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