Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2017-07-27T01:12:04Z | - |
dc.date.available | 2017-07-27T01:12:04Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.citation | 20th Microoptics Conference (MOC’15), Fukuoka, Japan, Oct. 25 - 28, 2015, Page. 70-71 | en_US |
dc.identifier.isbn | 978-4-8634-8486-3 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/document/7416402/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28060 | - |
dc.description.abstract | To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements. | en_US |
dc.language.iso | en | en_US |
dc.publisher | The Japan Society of Applied Physics | en_US |
dc.subject | Light emitting diodes | en_US |
dc.subject | Temperature measurement | en_US |
dc.subject | Photoconductivity | en_US |
dc.subject | Quantum well devices | en_US |
dc.subject | Capacitance-voltage characteristics | en_US |
dc.subject | Power generation | en_US |
dc.subject | Voltage measurement | en_US |
dc.title | Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/MOC.2015.7416402 | - |
dc.relation.page | 70-71 | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.sector.campus | S | - |
dc.sector.daehak | GRADUATE SCHOOL[S] | - |
dc.sector.department | DEPARTMENT OF BIONANOTECHNOLOGY | - |
dc.identifier.pid | dshin | - |
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