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dc.contributor.authorBukhvalov Danil-
dc.date.accessioned2017-07-20T07:40:58Z-
dc.date.available2017-07-20T07:40:58Z-
dc.date.issued2015-10-
dc.identifier.citationPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v. 252, NO 10, Page. 2185-2190en_US
dc.identifier.issn0370-1972-
dc.identifier.issn1521-3951-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/pssb.201552103/full-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27972-
dc.description.abstractThe results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2 host material after pulsed implantation with [Mn+] and [Co+, Mn+] ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E=30 keV, D=2x10(17)cm(-2)) with respect to those of untreated a-SiO2. Similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion implantation induces the local high pressure effect that leads to the appearance of SiO6-structural units in a-SiO2 host, forming stishovite-like local atomic structure. This process can be described within an electronic bonding transition from the fourfold quartz-like to sixfold stishovite-like high-pressure phase in the SiO2 host matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D=3x10(16)cm(-2).en_US
dc.description.sponsorshipXPS measurements and DFT calculations are supported by Russian Science Foundation (Grant no. 14-22-00004). The preparation of a-SiO<INF>2</INF> samples and ion-implantation treatment are supported by Deutsche Forschungsgemeinschaft-DFG (German Research Foundation Project FI 497/15-1) and the Russian Ministry of Science and Education (Government Task 3.2016.2014/K).en_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.subjectdensiy functional theoryen_US
dc.subjection implantationen_US
dc.subjectmanganese ionsen_US
dc.subjectphase transitionen_US
dc.subjectquartzen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.titleOctahedral conversion of a-SiO2 host matrix by pulsed ion implantationen_US
dc.typeArticleen_US
dc.relation.no10-
dc.relation.volume252-
dc.identifier.doi10.1002/pssb.201552103-
dc.relation.page2185-2190-
dc.relation.journalPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS-
dc.contributor.googleauthorZatsepin, D. A.-
dc.contributor.googleauthorZatsepin, A. F.-
dc.contributor.googleauthorKurmaev, E. Z.-
dc.contributor.googleauthorGavrilov, N. V.-
dc.contributor.googleauthorSkorikov, N. A.-
dc.contributor.googleauthorvon Czarnowski, A.-
dc.contributor.googleauthorFitting, H. -J.-
dc.contributor.googleauthorBoukhvalov, D. W.-
dc.relation.code2015008631-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.piddanil-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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