Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bukhvalov Danil | - |
dc.date.accessioned | 2017-07-20T07:40:58Z | - |
dc.date.available | 2017-07-20T07:40:58Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v. 252, NO 10, Page. 2185-2190 | en_US |
dc.identifier.issn | 0370-1972 | - |
dc.identifier.issn | 1521-3951 | - |
dc.identifier.uri | http://onlinelibrary.wiley.com/doi/10.1002/pssb.201552103/full | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/27972 | - |
dc.description.abstract | The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2 host material after pulsed implantation with [Mn+] and [Co+, Mn+] ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E=30 keV, D=2x10(17)cm(-2)) with respect to those of untreated a-SiO2. Similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion implantation induces the local high pressure effect that leads to the appearance of SiO6-structural units in a-SiO2 host, forming stishovite-like local atomic structure. This process can be described within an electronic bonding transition from the fourfold quartz-like to sixfold stishovite-like high-pressure phase in the SiO2 host matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D=3x10(16)cm(-2). | en_US |
dc.description.sponsorship | XPS measurements and DFT calculations are supported by Russian Science Foundation (Grant no. 14-22-00004). The preparation of a-SiO<INF>2</INF> samples and ion-implantation treatment are supported by Deutsche Forschungsgemeinschaft-DFG (German Research Foundation Project FI 497/15-1) and the Russian Ministry of Science and Education (Government Task 3.2016.2014/K). | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | densiy functional theory | en_US |
dc.subject | ion implantation | en_US |
dc.subject | manganese ions | en_US |
dc.subject | phase transition | en_US |
dc.subject | quartz | en_US |
dc.subject | X-ray photoelectron spectroscopy | en_US |
dc.title | Octahedral conversion of a-SiO2 host matrix by pulsed ion implantation | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 252 | - |
dc.identifier.doi | 10.1002/pssb.201552103 | - |
dc.relation.page | 2185-2190 | - |
dc.relation.journal | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | - |
dc.contributor.googleauthor | Zatsepin, D. A. | - |
dc.contributor.googleauthor | Zatsepin, A. F. | - |
dc.contributor.googleauthor | Kurmaev, E. Z. | - |
dc.contributor.googleauthor | Gavrilov, N. V. | - |
dc.contributor.googleauthor | Skorikov, N. A. | - |
dc.contributor.googleauthor | von Czarnowski, A. | - |
dc.contributor.googleauthor | Fitting, H. -J. | - |
dc.contributor.googleauthor | Boukhvalov, D. W. | - |
dc.relation.code | 2015008631 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | danil | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.