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Octahedral conversion of a-SiO2 host matrix by pulsed ion implantation

Title
Octahedral conversion of a-SiO2 host matrix by pulsed ion implantation
Author
Bukhvalov Danil
Keywords
densiy functional theory; ion implantation; manganese ions; phase transition; quartz; X-ray photoelectron spectroscopy
Issue Date
2015-10
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v. 252, NO 10, Page. 2185-2190
Abstract
The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2 host material after pulsed implantation with [Mn+] and [Co+, Mn+] ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E=30 keV, D=2x10(17)cm(-2)) with respect to those of untreated a-SiO2. Similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion implantation induces the local high pressure effect that leads to the appearance of SiO6-structural units in a-SiO2 host, forming stishovite-like local atomic structure. This process can be described within an electronic bonding transition from the fourfold quartz-like to sixfold stishovite-like high-pressure phase in the SiO2 host matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D=3x10(16)cm(-2).
URI
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201552103/fullhttp://hdl.handle.net/20.500.11754/27972
ISSN
0370-1972; 1521-3951
DOI
10.1002/pssb.201552103
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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