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Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature

Title
Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature
Author
안진호
Keywords
Resistive Switching; Yttrium Oxide; Atomic Layer Deposition
Issue Date
2015-09
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, no. 10, Page. 7586-7589
Abstract
Resistive switching characteristics of insulating Y2O3 films grown by an atomic layer deposition technique have been investigated with their growth temperature range of 250 degrees C to 350 degrees C. Ru/Y2O3/Ru resistors reveal the bi-stable unipolar resistive switching behaviors. Resistive switching behaviors are related to the chemical bonding states of Y2O3 insulating films. As the insulating film growth temperature increases, Y2O3 film becomes much stoichiometric and little contaminated with impurities. Moreover, the resistance ratio high resistance state to low resistance state increases at growth temperature over 300 degrees C.
URI
http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00033http://hdl.handle.net/20.500.11754/27684
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2015.11163
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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