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dc.contributor.author전형탁-
dc.date.accessioned2017-06-07T07:34:50Z-
dc.date.available2017-06-07T07:34:50Z-
dc.date.issued2015-09-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 33, NO 5, Page. 111-111en_US
dc.identifier.issn0734-2101-
dc.identifier.issn1520-8559-
dc.identifier.urihttp://avs.scitation.org/doi/abs/10.1116/1.4922936-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27655-
dc.description.abstractDiffusion barrier characteristics of tungsten-nitride-carbide (WNxCy) thin films interposed between Cu and SiO2 layers were studied. The WNxCy films were deposited by remote plasma atomic layer deposition (RPALD) using a metal organic source, (Cp-Me)W(CO)(2)(NO), and ammonia. Auger electron spectroscopy analysis indicated the WNxCy films consisted of tungsten, nitrogen, carbon, and oxygen. X-ray diffraction (XRD) analysis showed that the film deposited at 350 degrees C was nanocrystalline. The resistivity of WNxCy film deposited by RPALD was very low compared to that in previous research because of the lower nitrogen content and different crystal structures of the WNxCy. To verify the diffusion barrier characteristics of the WNxCy film, Cu films were deposited by physical vapor deposition after WNxCy film was formed by RPALD on Si substrate. The Cu/WNxCy/Si film stack was annealed in a vacuum by rapid thermal annealing at 500 degrees C. Cu diffusion through the barrier layer was verified by XRD. Stable film properties were observed up to 500 degrees C, confirming that WNxCy film is suitable as a Cu diffusion barrier in microelectronic circuits. VC 2015 American Vacuum Society.en_US
dc.description.sponsorshipThis study was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (Grant No. NRF-2014R1A2A1A11053174).en_US
dc.language.isoenen_US
dc.publisherA V S AMER INST PHYSICSen_US
dc.subjectTUNGSTEN NITRIDE FILMSen_US
dc.subjectTHIN-FILMSen_US
dc.subjectCOPPERen_US
dc.subjectMETALLIZATIONen_US
dc.subjectPRECURSORen_US
dc.subjectTEMPERATUREen_US
dc.titleCharacteristics of WNxCy films deposited using remote plasma atomic layer deposition with (Cp-Me)W(CO)(2)(NO) for Cu diffusion barrieren_US
dc.typeArticleen_US
dc.relation.no5-
dc.relation.volume33-
dc.identifier.doi10.1116/1.4922936-
dc.relation.page111-111-
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.contributor.googleauthorKim, Hyunjung-
dc.contributor.googleauthorPark, Jingyu-
dc.contributor.googleauthorJeon, Heeyoung-
dc.contributor.googleauthorJang, Woochool-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.contributor.googleauthorYuh, Junhan-
dc.relation.code2015001473-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
dc.identifier.researcherIDP-3193-2015-
dc.identifier.orcidhttp://orcid.org/0000-0003-2502-7413-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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