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dc.contributor.author전형탁-
dc.date.accessioned2017-06-07T07:24:55Z-
dc.date.available2017-06-07T07:24:55Z-
dc.date.issued2015-09-
dc.identifier.citationCURRENT APPLIED PHYSICS, v. 15, NO 9, Page. 1005-1009en_US
dc.identifier.issn1567-1739-
dc.identifier.issn1878-1675-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S156717391500190X-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27653-
dc.description.abstractForming-free and self-compliant bipolar resistive switching is observed in Cu/TaOx/TiN conductive bridge random access memory. Generally, Pt has been investigated as an inert electrode. However, Pt is not desirable material in current semiconductor industry for mass production. In this study, all electrodes are adapted to complementary metal-oxide-semiconductor compatible materials. The self-compliant resistive switching is achieved via usage of TiN bottom electrode. Also, dissolved Cu ions in TaOx lead to forming-free resistive switching behavior. The resistive switching mechanism is formation and rupture of combined oxygen vacancy/metallic copper conductive filament. We propose that Cu/TaOx/TiN is a promising candidate for a conductive bridge random access memory structure. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by a National Research Foundation (NRF) of Korea grant funded by the Korean Government (NRF-2014M3A7B4049367) and (NRF-2014049368) through the NRF of MEST, Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectRRAMen_US
dc.subjectCBRAMen_US
dc.subjectResistive switchingen_US
dc.subjectTaOxen_US
dc.subjectConductive filamenten_US
dc.titleResistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filamentsen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume15-
dc.identifier.doi10.1016/j.cap.2015.06.002-
dc.relation.page1005-1009-
dc.relation.journalCURRENT APPLIED PHYSICS-
dc.contributor.googleauthorJeon, Heeyoung-
dc.contributor.googleauthorPark, Jingyu-
dc.contributor.googleauthorJang, Woochool-
dc.contributor.googleauthorKim, Hyunjung-
dc.contributor.googleauthorSong, Hyoseok-
dc.contributor.googleauthorKim, Honggi-
dc.contributor.googleauthorSeo, Hyungtak-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.relation.code2015001919-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
dc.identifier.researcherIDP-3193-2015-
dc.identifier.orcidhttp://orcid.org/0000-0003-2502-7413-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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