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dc.contributor.author박진성-
dc.date.accessioned2017-06-02T00:22:00Z-
dc.date.available2017-06-02T00:22:00Z-
dc.date.issued2015-09-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v. 36, NO 9, Page. 917-919en_US
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttp://ieeexplore.ieee.org/abstract/document/7167653/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27576-
dc.description.abstractFlexible top-gate amorphous InGaZnO thin-film transistors are fabricated on polyimide substrates. The effect of the alumina buffer layers on the device performance and stability is demonstrated using two types of atomic layer deposition reactant sources: 1) ozone and 2) water. Alumina buffers formed by water reactants have better barrier properties against the ambient than those formed by ozone. Furthermore, less charge trapping at sub-gap density-of-states occurs with higher film density of the buffer layer. Stability characteristics under negative bias temperature stress are enhanced by optimization of the buffer layer formation on flexible substrates.en_US
dc.description.sponsorshipThis work was supported in part by the Industry Technology Research and Development Program within the Ministry of Trade, Industry and Energy through the Korea Evaluation Institute of Industrial Technology under Grant 10051080, in part by LG Display Company, Ltd., and in part by the Ministry of Science, ICT and Future Planning through the Institute for Information and Communications Technology Promotion under Grant 10041416. The review of this letter was arranged by Editor S. Hall. (Saeroonter Oh and Jin-Seong Park contributed equally to this work.) (Corresponding author: Saeroonter Oh and Jin-Seong Park.)en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectAmorphous InGaZnO (a-IGZO)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjectalumina bufferen_US
dc.subjectatomic layer deposition (ALD)en_US
dc.titleEffect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substratesen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume36-
dc.identifier.doi10.1109/LED.2015.2461003-
dc.relation.page917-919-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.contributor.googleauthorOk, Kyung-Chul-
dc.contributor.googleauthorOh, Saeroonter-
dc.contributor.googleauthorJeong, Hyun-Jun-
dc.contributor.googleauthorBae, Jong Uk-
dc.contributor.googleauthorPark, Jin-Seong-
dc.relation.code2015000488-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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