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dc.contributor.author정재경-
dc.date.accessioned2017-05-29T07:17:52Z-
dc.date.available2017-05-29T07:17:52Z-
dc.date.issued2015-09-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v. 212, NO 9, Page. 1911-1915en_US
dc.identifier.issn1862-6300-
dc.identifier.issn1862-6319-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201532184/full-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/27516-
dc.description.abstractAlthough GaAs is one of the most attractive channel materials for achieving high electron mobility, reduction of the interface state is still required for high quality MOS devices. In this paper, thermal oxidation under two pressures and various temperatures, and subsequent HF etching were performed to deactivate the interfacial states of the Al2O3/GaAs stack. High pressure oxidation (HPO) at 10 atm and 400 degrees C resulted in substantial improvement in the C-V frequency dispersion characteristics whereas the deactivation effect of the interfacial trap density under the thermal oxidations at 1 atm was not observed irrespective of the thermal oxidation temperature, ranging from 400 to 550 degrees C. Strong disparity between pressure and temperature was elucidated based on the existence of an efficient As excess layer and the prevention of unwanted Ga oxidation. (C) 2015 WILEY-VCH Verlag GmbH Co. KGaA, Weinheimen_US
dc.description.sponsorshipThis study was supported financially by Samsung Electronics. Co., Ltd. (Process development of Ge and III-V compound semiconductor for high mobility channel devices) and Inha University Research Grant. The authors also wish to acknowledge the support of the National Center for Inter-University Research Facilities (NCIRF) for the XPS measurements.en_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.subjectcapacitorsen_US
dc.subjectfrequency dispersionen_US
dc.subjectGaAsen_US
dc.subjecthigh pressure oxidationen_US
dc.subjectinterfacial trapsen_US
dc.subjectmetal-oxide semiconductorsen_US
dc.subjectpassivationen_US
dc.titleImpact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitoren_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume212-
dc.identifier.doi10.1002/pssa.201532184-
dc.relation.page1911-1915-
dc.relation.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.contributor.googleauthorLim, Hajin-
dc.contributor.googleauthorKim, Seongkyung-
dc.contributor.googleauthorKim, Joon Rae-
dc.contributor.googleauthorSong, Ji Hun-
dc.contributor.googleauthorLee, Nae-In-
dc.contributor.googleauthorJeong, Jae Kyeong-
dc.contributor.googleauthorKim, Hyeong Joon-
dc.relation.code2015003364-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjkjeong1-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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