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Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor

Title
Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor
Author
정재경
Keywords
capacitors; frequency dispersion; GaAs; high pressure oxidation; interfacial traps; metal-oxide semiconductors; passivation
Issue Date
2015-09
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v. 212, NO 9, Page. 1911-1915
Abstract
Although GaAs is one of the most attractive channel materials for achieving high electron mobility, reduction of the interface state is still required for high quality MOS devices. In this paper, thermal oxidation under two pressures and various temperatures, and subsequent HF etching were performed to deactivate the interfacial states of the Al2O3/GaAs stack. High pressure oxidation (HPO) at 10 atm and 400 degrees C resulted in substantial improvement in the C-V frequency dispersion characteristics whereas the deactivation effect of the interfacial trap density under the thermal oxidations at 1 atm was not observed irrespective of the thermal oxidation temperature, ranging from 400 to 550 degrees C. Strong disparity between pressure and temperature was elucidated based on the existence of an efficient As excess layer and the prevention of unwanted Ga oxidation. (C) 2015 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim
URI
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532184/fullhttp://hdl.handle.net/20.500.11754/27516
ISSN
1862-6300; 1862-6319
DOI
10.1002/pssa.201532184
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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