Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2017-05-24T02:26:41Z | - |
dc.date.available | 2017-05-24T02:26:41Z | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | 반도체디스플레이기술학회지, v. 14, NO 3, Page. 7-11 | en_US |
dc.identifier.issn | 1738-2270 | - |
dc.identifier.uri | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002038396 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/27422 | - |
dc.description.abstract | In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) SiNx membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for SiNx EUV pellicle fabrication. | en_US |
dc.description.sponsorship | 이 논문은 한국 정부 (MSIP)에서 후원하는 한국연구재단 (National Research Foundation of Korea,NRF) 의 기초연구 사업에 의하여 지원되었음 (Grant No.2011-0028570) | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 한국반도체디스플레이기술학회 | en_US |
dc.subject | EUV lithography | en_US |
dc.subject | pellicle | en_US |
dc.subject | wet etching | en_US |
dc.subject | SiNx membrane | en_US |
dc.title | HF 습식 식각을 이용한 극자외선 노광 기술용 SiNx 펠리클 제작 공정 | en_US |
dc.title.alternative | Manufacturing SiNx extreme ultraviolet pellicle with HF wet etching process | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 14 | - |
dc.relation.page | 7-11 | - |
dc.relation.journal | 반도체디스플레이기술학회지 | - |
dc.contributor.googleauthor | 김지은 | - |
dc.contributor.googleauthor | 김정환 | - |
dc.contributor.googleauthor | 홍성철 | - |
dc.contributor.googleauthor | 조한구 | - |
dc.contributor.googleauthor | 안진호 | - |
dc.contributor.googleauthor | Kim, Ji Eun | - |
dc.contributor.googleauthor | Kim, Jung Hwan | - |
dc.contributor.googleauthor | Hong, Seongchul | - |
dc.contributor.googleauthor | Cho, Hanku | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2015040848 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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