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HF 습식 식각을 이용한 극자외선 노광 기술용 SiNx 펠리클 제작 공정

Title
HF 습식 식각을 이용한 극자외선 노광 기술용 SiNx 펠리클 제작 공정
Other Titles
Manufacturing SiNx extreme ultraviolet pellicle with HF wet etching process
Author
안진호
Keywords
EUV lithography; pellicle; wet etching; SiNx membrane
Issue Date
2015-09
Publisher
한국반도체디스플레이기술학회
Citation
반도체디스플레이기술학회지, v. 14, NO 3, Page. 7-11
Abstract
In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) SiNx membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for SiNx EUV pellicle fabrication.
URI
https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002038396http://hdl.handle.net/20.500.11754/27422
ISSN
1738-2270
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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