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SRAF를 적용한 극자외선 노광기술용 위상 변위 마스크의 반사도에 따른 이미징 특성 연구

Title
SRAF를 적용한 극자외선 노광기술용 위상 변위 마스크의 반사도에 따른 이미징 특성 연구
Other Titles
aluation of Imaging Performance of Phase Shift Mask Depending on Reflectivity with Sub-resolution Assist Feature in EUV Lithography )
Author
안진호
Keywords
EUV lithography; phase shift mask; SRAF; process window; optical proximity correction
Issue Date
2015-09
Publisher
한국반도체디스플레이기술학회
Citation
반도체디스플레이기술학회지, v. 14, NO 3, Page. 1-5
Abstract
In photolithography process, resolution enhancement techniques such as optical proximity correction (OPC) and phase shift mask (PSM) have been applied to improve resolution. Especially, sub-resolution assist feature (SRAF) is one of the most important OPC to enhance image quality including depth of focus (DOF). However, imaging performance of the mask could be varied with the diffraction order amplitude changed by inserting SRAF. Therefore, in this study, we investigated the imaging properties and process margin of attenuated PSM with SRAF. Reflectivities of attenuated PSMs at 13.5 nm were 3, 6, 9% and simulation was performed by PROLITHTM. As a result, aerial image properties and DOF as well as diffraction efficiency were improved by increasing the reflectivity of attenuated PSM. Additionally, printed critical dimension variations depending on SRAF width and space error were also reduced for attenuated PSM with high reflectivity. However, SRAF could be printed when reflectivity of attenuated PSM is high enough. In conclusion, optimization of reflectivity of attenuated PSM and SRAF to prevent side-lobe from being printed is needed to be considered.
URI
https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002038389http://hdl.handle.net/20.500.11754/27421
ISSN
1738-2270
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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