Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2017-05-16T08:22:05Z | - |
dc.date.available | 2017-05-16T08:22:05Z | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 36, NO 9, Page. 884-886 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/abstract/document/7151781/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/27343 | - |
dc.description.abstract | We demonstrate the use of germanium passivation in conjunction with a ZnO interlayer in a metal-interlayer-semiconductor structure in a source/drain (S/D) contact. The Fermi-level pinning problem resulting in the large contact resistances in S/D contacts is effectively alleviated by inserting a thin Ge passivation layer and a ZnO interlayer, passivating the GaAs surface and reducing the metal-induced gap states on the GaAs surface, respectively. The specific contact resistivity for the Ti/ZnO/Ge/n-GaAs (similar to 2 x 10(18) cm(-3)) structure exhibits a similar to 1660x reduction compared with that of a Ti/n-GaAs structure. These results suggest that the proposed structure shows promise as a nonalloyed ohmic contact in high-electron-mobility transistors. | en_US |
dc.description.sponsorship | This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT, and Future Planning under Grant 2014R1A1A1036090 and in part by the Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea, under Grant 10052804. The review of this letter was arranged by Editor T. Egawa. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Fermi level unpinning | en_US |
dc.subject | gallium arsenide | en_US |
dc.subject | germanium | en_US |
dc.subject | specific contact resistivity | en_US |
dc.subject | passivation | en_US |
dc.title | Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 36 | - |
dc.identifier.doi | 10.1109/LED.2015.2453479 | - |
dc.relation.page | 884-886 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Kim, Seung-Hwan | - |
dc.contributor.googleauthor | Kim, Gwang-Sik | - |
dc.contributor.googleauthor | Kim, Jeong-Kyu | - |
dc.contributor.googleauthor | Park, Jin-Hong | - |
dc.contributor.googleauthor | Shin, Changhwan | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.contributor.googleauthor | Yu, Hyun-Yong | - |
dc.relation.code | 2015000488 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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