Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110)
- Title
- Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110)
- Author
- 조준형
- Keywords
- INVERSE-PHOTOEMISSION; SURFACE-STATES; INTERFACE; BI/GAAS(110); SPECTROSCOPY; METALS
- Issue Date
- 2015-08
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v. 92, NO 8, Page. 85303-85308
- Abstract
- The search for one-dimensional electron systems with a giant Rashba-type spin splitting is of importance for the application of spin transport. Here we report, based on a first-principles density-functional-theory calculation, that Bi zigzag chains formed on a heterogeneous GaAs(110) surface have a giant spin splitting of surface states. This giant spin splitting is revealed to originate from spin-orbit coupling (SOC) and electric dipole interaction that are significantly enhanced by (i) the asymmetric surface charge distribution due to the strong SOC-induced hybridization of the Bi p(x), p(y), and p(z) orbitals and (ii) the large out-of-plane and in-plane potential gradients generated by two geometrically and electronically inequivalent Bi atoms bonding to Ga and As atoms. The results demonstrate an important implication of the in-plane and out-of-plane asymmetry of the Bi/GaAs(110) interface system in producing the giant spin splitting with the in-plane and out-of-plane spin components.
- URI
- https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.085303http://hdl.handle.net/20.500.11754/26934
- ISSN
- 1098-0121; 1550-235X
- DOI
- 10.1103/PhysRevB.92.085303
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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- Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110).pdfDownload
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