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dc.contributor.author안진호-
dc.date.accessioned2017-04-25T01:38:38Z-
dc.date.available2017-04-25T01:38:38Z-
dc.date.issued2015-08-
dc.identifier.citationSCIENTIFIC REPORTS, v. 5, Page. 1-8en_US
dc.identifier.issn2045-2322-
dc.identifier.urihttps://www.nature.com/articles/srep14398-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/26928-
dc.description.abstractCorrigendum This work is supported by Samsung Electronics, and the Ministry of Trade, Industry and Energy under the contract for the MLC-PRAM project [10039200, Development of High Performance Phase Change Materials], the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (Grant No. 2011-0028570), and KIST internal projects (Grant No. 2E25372 & 2E25373).en_US
dc.language.isoenen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.titleLattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi (vol 5, 12867, 2015)en_US
dc.typeArticleen_US
dc.relation.volume5-
dc.identifier.doi10.1038/srep14398-
dc.relation.page1-8-
dc.relation.journalSCIENTIFIC REPORTS-
dc.contributor.googleauthorChoi, Minho-
dc.contributor.googleauthorChoi, Heechae-
dc.contributor.googleauthorKim, Seungchul-
dc.contributor.googleauthorAhn, Jinho-
dc.contributor.googleauthorKim, Yong Tae-
dc.relation.code2015014066-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-


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