Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2017-04-25T01:38:38Z | - |
dc.date.available | 2017-04-25T01:38:38Z | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 5, Page. 1-8 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/srep14398 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26928 | - |
dc.description.abstract | Corrigendum This work is supported by Samsung Electronics, and the Ministry of Trade, Industry and Energy under the contract for the MLC-PRAM project [10039200, Development of High Performance Phase Change Materials], the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (Grant No. 2011-0028570), and KIST internal projects (Grant No. 2E25372 & 2E25373). | en_US |
dc.language.iso | en | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.title | Lattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi (vol 5, 12867, 2015) | en_US |
dc.type | Article | en_US |
dc.relation.volume | 5 | - |
dc.identifier.doi | 10.1038/srep14398 | - |
dc.relation.page | 1-8 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Choi, Minho | - |
dc.contributor.googleauthor | Choi, Heechae | - |
dc.contributor.googleauthor | Kim, Seungchul | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.contributor.googleauthor | Kim, Yong Tae | - |
dc.relation.code | 2015014066 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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