Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2017-04-24T06:33:14Z | - |
dc.date.available | 2017-04-24T06:33:14Z | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 67, NO 3, Page. 502-506 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938/jkps.67.502 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26905 | - |
dc.description.abstract | The effect of the Si nanowire's diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistors (TSNWFETs) was simulated by using the three-dimensional technology computer-aided design simulation tools of Sentaurus and taking into account quantum effects. While the switching and the short-channel immunity characteristics were improved with decreasing nanowire diameter, the threshold voltage and the total on-current for the TSNWFETs decreased, resulting in a deterioration of device performances. The swing characteristics for the TSNWFETs maintained almost the same behaviors regardless of the boron concentration variation in the nanowire. Gate-induced drain leakage (GIDL) of the TSNWFETs appeared at a high drain voltage, and the GIDL current increased with increasing boron concentration in the Si nanowires. The electrical characteristics of the TSNWFETs were improved by optimizing the diameter and the doping concentration of the Si nanowire to lower the GIDL and the off-state leakage current. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013R1A2A1A01016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.subject | Gate-all-around twin Si-nanowire field-effect transistors | en_US |
dc.subject | Electrical property | en_US |
dc.subject | Quantum effects | en_US |
dc.subject | Gate-induced drain leakage | en_US |
dc.title | Effect of the Si nanowire's diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 67 | - |
dc.identifier.doi | 10.3938/jkps.67.502 | - |
dc.relation.page | 502-506 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Kim, Dong Hun | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2015000007 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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