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Effect of the Si nanowire's diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistors

Title
Effect of the Si nanowire's diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistors
Author
김태환
Keywords
Gate-all-around twin Si-nanowire field-effect transistors; Electrical property; Quantum effects; Gate-induced drain leakage
Issue Date
2015-08
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 67, NO 3, Page. 502-506
Abstract
The effect of the Si nanowire's diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistors (TSNWFETs) was simulated by using the three-dimensional technology computer-aided design simulation tools of Sentaurus and taking into account quantum effects. While the switching and the short-channel immunity characteristics were improved with decreasing nanowire diameter, the threshold voltage and the total on-current for the TSNWFETs decreased, resulting in a deterioration of device performances. The swing characteristics for the TSNWFETs maintained almost the same behaviors regardless of the boron concentration variation in the nanowire. Gate-induced drain leakage (GIDL) of the TSNWFETs appeared at a high drain voltage, and the GIDL current increased with increasing boron concentration in the Si nanowires. The electrical characteristics of the TSNWFETs were improved by optimizing the diameter and the doping concentration of the Si nanowire to lower the GIDL and the off-state leakage current.
URI
https://link.springer.com/article/10.3938/jkps.67.502http://hdl.handle.net/20.500.11754/26905
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.67.502
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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