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Electrical degradation mechanisms of nanoscale charge trap flash memories due to trapped charge in the oxide layer

Title
Electrical degradation mechanisms of nanoscale charge trap flash memories due to trapped charge in the oxide layer
Author
김태환
Keywords
SONOS; Fixed charge; Threshold voltage shift; CTF degradation; RTN
Issue Date
2015-08
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 67, NO 3, Page. 533-536
Abstract
The deterioration of the electrical characteristics of charge trap flash (CTF) memories with a silicon-oxide-nitride-oxide-silicon (SONOS) structure due to the charge traps in the oxide layers attributed to the random trapping and detrapping processes was investigated. Simulation results for the CTF memories showed that the threshold voltage shift was decreased by the charge trapped in the oxide layers in the SONOS structure and that the charge trapped in the blocking oxide had more significant effects than that trapped in the tunneling oxide. The degradation effects of the charge trapped in the blocking oxide on the electrical characteristics of the CTF memories were clarified by examining the vertical electric field in the device.
URI
https://link.springer.com/article/10.3938/jkps.67.533http://hdl.handle.net/20.500.11754/26904
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.67.533
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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