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One-Pot Synthesis of h-BN Fullerenes Usinsg a Graphene Oxide Template

Title
One-Pot Synthesis of h-BN Fullerenes Usinsg a Graphene Oxide Template
Author
김현우
Keywords
semiconductors; fullerenes; chemical synthesis; transmission electron microscopy (TEM); raman spectroscopy
Issue Date
2015-08
Publisher
KOREAN INST METALS MATERIALS
Citation
METALS AND MATERIALS INTERNATIONAL, v. 21, NO 5, Page. 950-955
Abstract
Hexagonal-boron nitride (h-BN) fullerenes were synthesized from a graphene oxide (GO) template by simultaneously heating the GO and B2O3 in the presence of NH3 gas. Transmission electron microscopy (TEM) observations revealed that a considerable amount of product had a fullerene-like nanostructure. Typical BN fullerenes have a polyhedral shape, being hollow nanocages. Lattice-resolved TEM and X-ray diffraction consistently demonstrated the formation of h-BN fullerenes. The FTIR spectrum exhibited absorption bands at approximately 800 and 1378 cm(-1), which were related to the h-BN structure. The Raman spectra exhibited peaks at 1368 and 1399 cm(-1), which can be related to BN sheets and BN fullerenes, respectively. The photoluminescence spectrum of the h-BN fullerenes taken at 8 K exhibited intense white-light emission. To reveal the origin of the broad emission band, which could be a superimposition of several peaks, we used a deconvolution procedure based on Gaussian functions. We proposed a growth mechanism of the h-BN fullerenes and verified it with a thermodynamic calculation. This work provides a cost-effective approach to synthesize fullerene-type boron nitride on a production scale.
URI
https://link.springer.com/article/10.1007%2Fs12540-015-5043-0http://hdl.handle.net/20.500.11754/26871
ISSN
1598-9623; 2005-4149
DOI
10.1007/s12540-015-5043-0
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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