428 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author김은규-
dc.date.accessioned2017-04-21T02:18:02Z-
dc.date.available2017-04-21T02:18:02Z-
dc.date.issued2015-08-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 67, NO 4, Page. 672-675en_US
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttps://link.springer.com/article/10.3938/jkps.67.672-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/26865-
dc.description.abstractP-type ZnTe thin films were grown on sapphire substrates by using nitrogen doping during pulsed laser deposition. The nitrogen doping was controlled by using the N-2 gas pressure, which ranged from 0.1 to 70 mTorr. X-ray diffraction showed the ZnTe films to have a cubic zinc-blende structure, and the full width at half maximum (FWHM) of the (111) peak of undoped ZnTe film was 1.05A degrees, but the FWHM and the intensity of the (111) peak decreased with increasing nitrogen doping. From Raman spectroscopy measurements, Te A(1) and Te E (LO) modes appeared in all ZnTe films, with the 1LO, 2LO, and 3LO modes decreasing with increasing N-2 pressure. The samples grown at N-2 pressures of 50 and 70 mTorr showed a N-Zn bond with binding energy of 397.1 eV and with nitrogen contents of 2.6 and 4.7 at%, respectively. From these results, incorporation of nitrogen atoms into ZnTe film was more efficient at high N-2 pressure of 70 mTorr, at which the hole concentration of the N-doped ZnTe film was about 9.61 x 10(17) cm (-3).en_US
dc.description.sponsorshipThis page reports the results of a study on the “Leaders INdustry-university Cooperation” Project supported by the Korea government’s ministry of education (MOE).This work was also supported in part by a National Research Foundation of Korea (NRF) grant funded by the Korea government’s ministry of science (MSIP) (NRF-2014R1A2A1A11053936) and by a New and Renewable Energy Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean government’s ministry of trade, industry & energy (MOTIE) (No. 2013010010120).en_US
dc.language.isoenen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectP-type ZnTeen_US
dc.subjectNitrogen dopingen_US
dc.subjectPulsed laser depositionen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.titleGrowth of p-type ZnTe thin films by using nitrogen doping during pulsed laser depositionen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume67-
dc.identifier.doi10.3938/jkps.67.672-
dc.relation.page672-675-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorLee, Kyoung Su-
dc.contributor.googleauthorOh, Gyujin-
dc.contributor.googleauthorKim, Eun Kyu-
dc.relation.code2015000007-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF PHYSICS-
dc.identifier.pidek-kim-
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE