Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 홍진표 | - |
dc.date.accessioned | 2017-04-21T01:54:24Z | - |
dc.date.available | 2017-04-21T01:54:24Z | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 5, Page. 1-11 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/srep13362 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26861 | - |
dc.description.abstract | Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. | en_US |
dc.description.sponsorship | This work was partially supported by the IT R&D program of MKE/KEIT [KI10039191, Development of Fundamental Technologies for Tera Bit Level 3D ReRAM] and in part supported by a grant from the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2060350). | en_US |
dc.language.iso | en | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | NONVOLATILE MEMORY DEVICE | en_US |
dc.subject | TRANSITION-METAL OXIDES | en_US |
dc.subject | HIGH-CURRENT-DENSITY | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | RESISTIVE SWITCHES | en_US |
dc.subject | STORAGE | en_US |
dc.subject | TRANSISTORS | en_US |
dc.subject | DIODES | en_US |
dc.title | All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics | en_US |
dc.type | Article | en_US |
dc.relation.volume | 5 | - |
dc.identifier.doi | 10.1038/srep13362 | - |
dc.relation.page | 1-11 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Bae, Yoon Cheol | - |
dc.contributor.googleauthor | Lee, Ah Rahm | - |
dc.contributor.googleauthor | Baek, Gwang Ho | - |
dc.contributor.googleauthor | Chung, Je Bock | - |
dc.contributor.googleauthor | Kim, Tae Yoon | - |
dc.contributor.googleauthor | Park, Jea Gun | - |
dc.contributor.googleauthor | Hong, Jin Pyo | - |
dc.relation.code | 2015014066 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | jphong | - |
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