All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
- Title
- All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
- Author
- 홍진표
- Keywords
- NONVOLATILE MEMORY DEVICE; TRANSITION-METAL OXIDES; HIGH-CURRENT-DENSITY; THIN-FILMS; RESISTIVE SWITCHES; STORAGE; TRANSISTORS; DIODES
- Issue Date
- 2015-08
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v. 5, Page. 1-11
- Abstract
- Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes.
- URI
- https://www.nature.com/articles/srep13362http://hdl.handle.net/20.500.11754/26861
- ISSN
- 2045-2322
- DOI
- 10.1038/srep13362
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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- All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.pdfDownload
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