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dc.contributor.author박진성-
dc.date.accessioned2017-03-28T04:29:04Z-
dc.date.available2017-03-28T04:29:04Z-
dc.date.issued2015-07-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 33, no. 2, Page. 1-2en_US
dc.identifier.issn0734-2101-
dc.identifier.issn1520-8559-
dc.identifier.urihttp://avs.scitation.org/doi/abs/10.1116/1.4907729-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/26371-
dc.description.abstractGermanium-doped indium-gallium oxide (GIGO) thin film transistors (TFTs) decorated with silver (Ag) nanoparticles (NPs) were prepared to study the plasmon effect. GIGO films of various thicknesses were deposited on SiO2/Si substrates, and Ag NPs (similar to 25 nm in diameter) were formed using a thermal evaporator and a postannealing process. The Ag NPs effectively absorbed light in the wavelength range of 500 and 600 nm, which corresponds to the plasmonic effect. Due to the plasmon resonance of Ag NPs, a significantly enhanced photocurrent was observed on the devices. The current increased by 348% with exposure to light when the Ag NPs were formed at the interface between the 10-nm-thick GIGO film and SiO2 substrate. The increased photocurrent revealed the presence of strong coupling between the localized plasmon and electrical carrier of the devices. The results show that the photocurrent of GIGO TFTs can be greatly enhanced when the plasmonic Ag NPs are located in the channel region of the devices. (C) 2015 American Vacuum Society.en_US
dc.description.sponsorshipThis work was supported by the Center for Advanced Soft-Electronics funded by the Ministry of Science, ICT and Future Planning as a Global Frontier Project (CASE-2014M3A6A5060946). It was also supported by a grant from Kyung Hee University (20140325) and a research project of the National Research Foundation of Korea (NRF-2013R1A1A1A05007934).en_US
dc.language.isoenen_US
dc.publisherA V S AMER INST PHYSICSen_US
dc.subjectPERFORMANCEen_US
dc.subjectSUBSTRATEen_US
dc.titlePlasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticlesen_US
dc.typeArticleen_US
dc.relation.volume33-
dc.identifier.doi10.1116/1.4907729-
dc.relation.page1-2-
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.contributor.googleauthorPark, Si Jin-
dc.contributor.googleauthorLee, Sang Moo-
dc.contributor.googleauthorKang, Seung Jun-
dc.contributor.googleauthorLee, Kwang-Ho-
dc.contributor.googleauthorPark, Jin-Seong-
dc.relation.code2015001473-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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