Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2017-03-28T04:29:04Z | - |
dc.date.available | 2017-03-28T04:29:04Z | - |
dc.date.issued | 2015-07 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 33, no. 2, Page. 1-2 | en_US |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.issn | 1520-8559 | - |
dc.identifier.uri | http://avs.scitation.org/doi/abs/10.1116/1.4907729 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26371 | - |
dc.description.abstract | Germanium-doped indium-gallium oxide (GIGO) thin film transistors (TFTs) decorated with silver (Ag) nanoparticles (NPs) were prepared to study the plasmon effect. GIGO films of various thicknesses were deposited on SiO2/Si substrates, and Ag NPs (similar to 25 nm in diameter) were formed using a thermal evaporator and a postannealing process. The Ag NPs effectively absorbed light in the wavelength range of 500 and 600 nm, which corresponds to the plasmonic effect. Due to the plasmon resonance of Ag NPs, a significantly enhanced photocurrent was observed on the devices. The current increased by 348% with exposure to light when the Ag NPs were formed at the interface between the 10-nm-thick GIGO film and SiO2 substrate. The increased photocurrent revealed the presence of strong coupling between the localized plasmon and electrical carrier of the devices. The results show that the photocurrent of GIGO TFTs can be greatly enhanced when the plasmonic Ag NPs are located in the channel region of the devices. (C) 2015 American Vacuum Society. | en_US |
dc.description.sponsorship | This work was supported by the Center for Advanced Soft-Electronics funded by the Ministry of Science, ICT and Future Planning as a Global Frontier Project (CASE-2014M3A6A5060946). It was also supported by a grant from Kyung Hee University (20140325) and a research project of the National Research Foundation of Korea (NRF-2013R1A1A1A05007934). | en_US |
dc.language.iso | en | en_US |
dc.publisher | A V S AMER INST PHYSICS | en_US |
dc.subject | PERFORMANCE | en_US |
dc.subject | SUBSTRATE | en_US |
dc.title | Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles | en_US |
dc.type | Article | en_US |
dc.relation.volume | 33 | - |
dc.identifier.doi | 10.1116/1.4907729 | - |
dc.relation.page | 1-2 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.contributor.googleauthor | Park, Si Jin | - |
dc.contributor.googleauthor | Lee, Sang Moo | - |
dc.contributor.googleauthor | Kang, Seung Jun | - |
dc.contributor.googleauthor | Lee, Kwang-Ho | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2015001473 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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