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Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles

Title
Plasmon-enhanced photocurrent of Ge-doped InGaO thin film transistors using silver nanoparticles
Author
박진성
Keywords
PERFORMANCE; SUBSTRATE
Issue Date
2015-07
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 33, no. 2, Page. 1-2
Abstract
Germanium-doped indium-gallium oxide (GIGO) thin film transistors (TFTs) decorated with silver (Ag) nanoparticles (NPs) were prepared to study the plasmon effect. GIGO films of various thicknesses were deposited on SiO2/Si substrates, and Ag NPs (similar to 25 nm in diameter) were formed using a thermal evaporator and a postannealing process. The Ag NPs effectively absorbed light in the wavelength range of 500 and 600 nm, which corresponds to the plasmonic effect. Due to the plasmon resonance of Ag NPs, a significantly enhanced photocurrent was observed on the devices. The current increased by 348% with exposure to light when the Ag NPs were formed at the interface between the 10-nm-thick GIGO film and SiO2 substrate. The increased photocurrent revealed the presence of strong coupling between the localized plasmon and electrical carrier of the devices. The results show that the photocurrent of GIGO TFTs can be greatly enhanced when the plasmonic Ag NPs are located in the channel region of the devices. (C) 2015 American Vacuum Society.
URI
http://avs.scitation.org/doi/abs/10.1116/1.4907729http://hdl.handle.net/20.500.11754/26371
ISSN
0734-2101; 1520-8559
DOI
10.1116/1.4907729
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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