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dc.contributor.author김영도-
dc.date.accessioned2017-03-17T07:14:57Z-
dc.date.available2017-03-17T07:14:57Z-
dc.date.issued2015-07-
dc.identifier.citation한국재료학회지, v. 25, NO 1, Page. 16-20en_US
dc.identifier.issn1225-0562-
dc.identifier.issn2287-7258-
dc.identifier.urihttp://journal.mrs-k.or.kr/journal/article.php?code=21808-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/26189-
dc.description.abstractIn this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 μm, 130 μm, 140 μm. Formation of the Al doped p+ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p+ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm2 of Al paste, wafer bowing in a thickness of 140 μm reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 μm reached a maximum of 4 mm. The study’s results suggest that when considering uniformity and thickness of an Al doped p+ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm2 in a wafer with a thickness of 120 μm.en_US
dc.description.sponsorship본 연구는 2014년도 산업통상자원부의 재원으로 한국에너지기술평가원(KETEP)의 지원을 받아 수행한 연구 과제입니다(No.2012T100201712).en_US
dc.language.isoko_KRen_US
dc.publisherMaterials Research Society of Koreaen_US
dc.subjectsolar cellen_US
dc.subjectn-typeen_US
dc.subjectthin waferen_US
dc.subjectbowingen_US
dc.subjectAl doped p+ layeren_US
dc.titleN타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석en_US
dc.title.alternativeAnalysis on bowing and formation of Al doped P+ layer by changes of thickness of N-type wafer and amount of Al pasteen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume25-
dc.identifier.doi10.3740/MRSK.2015.25.1.16-
dc.relation.page16-20-
dc.relation.journalKorean Journal of Materials Research-
dc.contributor.googleauthor박태준-
dc.contributor.googleauthor변종민-
dc.contributor.googleauthor김영도-
dc.contributor.googleauthorPark, Tae Jun-
dc.contributor.googleauthorByun, Jong Min-
dc.contributor.googleauthorKIm, Young Do-
dc.relation.code2015031544-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidydkim1-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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