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dc.contributor.author박재근-
dc.date.accessioned2017-03-16T00:21:47Z-
dc.date.available2017-03-16T00:21:47Z-
dc.date.issued2015-07-
dc.identifier.citationJOURNAL OF MATERIALS CHEMISTRY C, v. 3, NO 37, Page. 9540-9550en_US
dc.identifier.issn2050-7526-
dc.identifier.issn2050-7534-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2015/TC/C5TC01342A#!divAbstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/26139-
dc.description.abstractNanoscale (similar to 28 nm) non-volatile multi-level conductive-bridging-random-access-memory (CBRAM) cells are developed by using a CuO solid-electrolyte, providing a V-set of similar to 0.96 V, a V-reset of similar to-1.5 V, a similar to 1 x 10(2) memory margin, similar to 3 x 10(6) write/erase endurance cycles with 100 mu s AC pulse, similar to 6.63 years retention time at 85 degrees C, similar to 100 ns writing speed, and multi-level (four-level) cell operation. Their nonvolatile memory cell performance characteristics are intensively determined by studying material properties such as crystallinity and poly grain size of the CuO solid-electrolyte and are found to be independent of nanoscale memory cell size. In particular, the CuO solid-electrolyte-based CBRAM cell vertically connecting with p/n/p-type oxide (CuO/IGZO/CuO) selector shows the operation of 1S(selector) 1R(resistor), demonstrating a possibility of cross-bar memory-cell array for realizing terabit-integration non-volatile memory cells.en_US
dc.description.sponsorshipThis work was financially supported by the Brain Korea 21 Plus Program in 2014 and the Industrial Strategic Technology Development Program (10039191, The Next Generation MLC PRAM, 3D ReRAM, Device, Materials and Micro Fabrication Technology Development) funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectIONIC-CONDUCTIONen_US
dc.titleNanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistoren_US
dc.typeArticleen_US
dc.relation.no37-
dc.relation.volume3-
dc.identifier.doi10.1039/c5tc01342a-
dc.relation.page9540-9550-
dc.relation.journalJOURNAL OF MATERIALS CHEMISTRY C-
dc.contributor.googleauthorKwon, Kyoung-Cheol-
dc.contributor.googleauthorSong, Myung-Jin-
dc.contributor.googleauthorKwon, Ki-Hyun-
dc.contributor.googleauthorJeoung, Han-Vit-
dc.contributor.googleauthorKim, Dong-Won-
dc.contributor.googleauthorLee, Gon-Sub-
dc.contributor.googleauthorHong, Jin-Pyo-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2015001470-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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