Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2017-03-13T02:23:15Z | - |
dc.date.available | 2017-03-13T02:23:15Z | - |
dc.date.issued | 2015-07 | - |
dc.identifier.citation | CERAMICS INTERNATIONAL, v. 41, NO 10, Page. 13281-13284 | en_US |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.issn | 1873-3956 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0272884215014005 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26051 | - |
dc.description.abstract | Thin film transistors were fabricated using ZnO and ZnON semiconductors grown by DC reactive sputtering. After low vacuum annealing at 250 degrees C, ZnON devices exhibit superior electrical performance (mu(sat)=56.3 cm(2)/Vs, Vth = -1.59 V, and SS =0.51 V/dec) in comparison with ZnO devices (mu(sat)= 0.99 cm2/Vs, Vth=3.28 V, and SS =1.22 V/dec). The physical and electronic structures in both materials were analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding states were also examined by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive sputtering is found to suppress crystallization and enhance electron transport by the formation of Zn-N bonds. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by the Industry technology R&D program of MOTIE/KEIT. [10051080, Development of mechanical UI device core technology for small and medium-sized flexible display] and also done by the ICT R&D program of MSIP/IITP[10041416, The core technology development of light and space adaptable energy-saving I/O platform for future advertising service]. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | ZnO | en_US |
dc.subject | ZnON | en_US |
dc.subject | Oxide semiconductor | en_US |
dc.subject | X-ray absorption | en_US |
dc.subject | Thin film transistor | en_US |
dc.title | Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 41 | - |
dc.identifier.doi | 10.1016/j.ceramint.2015.07.110 | - |
dc.relation.page | 13281-13284 | - |
dc.relation.journal | CERAMICS INTERNATIONAL | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Lee, Hyun-Mo | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2015002110 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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