Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors
- Title
- Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors
- Author
- 박진성
- Keywords
- ZnO; ZnON; Oxide semiconductor; X-ray absorption; Thin film transistor
- Issue Date
- 2015-07
- Publisher
- ELSEVIER SCI LTD
- Citation
- CERAMICS INTERNATIONAL, v. 41, NO 10, Page. 13281-13284
- Abstract
- Thin film transistors were fabricated using ZnO and ZnON semiconductors grown by DC reactive sputtering. After low vacuum annealing at 250 degrees C, ZnON devices exhibit superior electrical performance (mu(sat)=56.3 cm(2)/Vs, Vth = -1.59 V, and SS =0.51 V/dec) in comparison with ZnO devices (mu(sat)= 0.99 cm2/Vs, Vth=3.28 V, and SS =1.22 V/dec). The physical and electronic structures in both materials were analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding states were also examined by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive sputtering is found to suppress crystallization and enhance electron transport by the formation of Zn-N bonds. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0272884215014005http://hdl.handle.net/20.500.11754/26051
- ISSN
- 0272-8842; 1873-3956
- DOI
- 10.1016/j.ceramint.2015.07.110
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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