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dc.contributor.author박호범-
dc.date.accessioned2017-03-09T04:59:53Z-
dc.date.available2017-03-09T04:59:53Z-
dc.date.issued2015-07-
dc.identifier.citationTHIN SOLID FILMS, v. 587, Page. 57-60en_US
dc.identifier.issn0040-6090-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0040609014011341-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/25978-
dc.description.abstractThe influence of a graphene oxide (GO) layer on Pt/Ta2O5 - x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5-x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for adjusting the low resistance states without changing the high resistance states. Controlling GO layer thickness represents the variation of the forming voltage and on/off ratio, demonstrating enhanced memory windows. The possible nature of the enhanced switching events is described by adapting the creation of strong conductive filaments driven by a greater resistive GO layer. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the R&D Program of the Ministry of Knowledge Economy [KI10039191, Development of Fundamental Technologies for Tera Bit Level 3D ReRAM].en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.subjectResistive switchingen_US
dc.subjectGraphene oxideen_US
dc.subjectBipolar resistive switchesen_US
dc.subjectResistive random-access memoryen_US
dc.titleEnhancement of memory windows in Pt/Ta2O5 (-) (x)/Ta bipolar resistive switches via a graphene oxide insertion layeren_US
dc.typeArticleen_US
dc.relation.volume587-
dc.identifier.doi10.1016/j.tsf.2014.11.032-
dc.relation.page57-60-
dc.relation.journalTHIN SOLID FILMS-
dc.contributor.googleauthorChung, Je Bock-
dc.contributor.googleauthorBae, Yoon Cheol-
dc.contributor.googleauthorLee, Ah Rahm-
dc.contributor.googleauthorBaek, Gwang Ho-
dc.contributor.googleauthorLee, Min Yong-
dc.contributor.googleauthorYoon, Hee Wook-
dc.contributor.googleauthorPark, Ho Bum-
dc.contributor.googleauthorHong, Jin Pyo-
dc.relation.code2015002894-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidbadtzhb-
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COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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