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Enhancement of memory windows in Pt/Ta2O5 (-) (x)/Ta bipolar resistive switches via a graphene oxide insertion layer

Title
Enhancement of memory windows in Pt/Ta2O5 (-) (x)/Ta bipolar resistive switches via a graphene oxide insertion layer
Author
박호범
Keywords
Resistive switching; Graphene oxide; Bipolar resistive switches; Resistive random-access memory
Issue Date
2015-07
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 587, Page. 57-60
Abstract
The influence of a graphene oxide (GO) layer on Pt/Ta2O5 - x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5-x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for adjusting the low resistance states without changing the high resistance states. Controlling GO layer thickness represents the variation of the forming voltage and on/off ratio, demonstrating enhanced memory windows. The possible nature of the enhanced switching events is described by adapting the creation of strong conductive filaments driven by a greater resistive GO layer. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0040609014011341http://hdl.handle.net/20.500.11754/25978
ISSN
0040-6090
DOI
10.1016/j.tsf.2014.11.032
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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