288 0

Effect of the concentration of the poly(3-hexylthiophene) on the electrical characteristics of diode rectifiable devices

Title
Effect of the concentration of the poly(3-hexylthiophene) on the electrical characteristics of diode rectifiable devices
Author
김태환
Keywords
P3HT; Concentration; Resistance switchable device; Diode rectifiable mode
Issue Date
2015-06
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 12, Page. 1868-1871
Abstract
The effect of the concentration of poly(3-hexylthiophene) (P3HT) on the electrical characteristics of diode rectifiable devices fabricated utilizing the P3HT was investigated. Atomic force microscopy images showed that the root-mean-square surface roughness of the P3HT thin films decreased with decreasing P3HT concentration. The current-voltage (I-V) characteristics of the Au/P3HT layer/indium-tin-oxide-coated glass devices showed resistance switchability. The I-V characteristics of the devices showed that the ON current at the same voltage decreased with increasing concentration and that the operating voltage of the device with a larger P3HT concentration was larger than that of the device with a smaller P3HT concentration. The diode rectifiable mode of the devices transformed from the Ohmic into the space-charge-limited current modes with increasing applied voltage.
URI
http://link.springer.com/article/10.3938/jkps.66.1868http://hdl.handle.net/20.500.11754/25571
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.66.1868
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE