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Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode

Title
Improvement in Device Performance of a-InGaZnO Transistors by Introduction of Ca-Doped Cu Source/Drain Electrode
Author
박종완
Keywords
Ca-doped Cu; low resistivity; a-IGZO; diffusion barrier; high performance; thin-film transistors
Issue Date
2015-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 36, NO 8, Page. 802-804
Abstract
This letter reports the effects of Ca doping into Cu films, which was used as a source/drain (S/D) electrode for high performance amorphous In-Ga-Zn-O (IGZO) thinfilm transistors (TFTs) with a low resistive-capacitive delay time. The IGZO TFTs with Ca-doped Cu S/D exhibited three times higher saturation mobility (16 cm(2)/Vs) and substantially lower subthreshold gate swing of 0.39 V/decade than the control devices with pure Cu S/D. The SIMS profile and cross-sectional transmission electron microscopy showed that Ca effectively prevented the Cu atoms from diffusing into channel IGZO region presumably as a result of Ca-O bond formation, which is responsible for their superior device performances.
URI
http://ieeexplore.ieee.org/abstract/document/7123601/?reload=truehttp://hdl.handle.net/20.500.11754/25551
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2015.2445348
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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