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dc.contributor.author장재영-
dc.date.accessioned2017-02-14T00:59:36Z-
dc.date.available2017-02-14T00:59:36Z-
dc.date.issued2015-06-
dc.identifier.citationACS NANO, v. 9, NO 6, Page. 5818-5824en_US
dc.identifier.issn1936-0851-
dc.identifier.issn1936-086X-
dc.identifier.urihttp://pubs.acs.org/doi/abs/10.1021/acsnano.5b01161-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/25457-
dc.description.abstractPreventing reactive gas species such as oxygen or water is important to ensure the stability and durability of organic electronics. Although inorganic materials have been predominantly employed as the protective layers, their poor mechanical property has hindered the practical application to flexible electronics. The densely packed hexagonal lattice of carbon atoms in graphene does not allow the transmission of small gas molecules. In addition, its outstanding mechanical flexibility and optical transmittance are expected to be useful to overcome the current mechanical limit of the inorganic materials. In this paper, we reported the measurement of the water vapor transmission rate (WVTR) through the 6-layer 10 x 10 cm(2) large-area graphene films synthesized by chemical vapor deposition (ND). The WVTR was measured to be as low as 10(-4) g/m(2). day initially, and stabilized at similar to 0.48 g/m(2). day, which corresponds to 7 times reduction in WVTR compared to bare polymer substrates. We also showed that the graphene-passivated organic field-effect transistors (OFETs) exhibited excellent environmental stability as well as a prolonged lifetime even after 500 bending cycles with strain of 2.3%. We expect that our results would be a good reference showing the graphene's potential as gas barriers for organic electronics.en_US
dc.description.sponsorshipThis research was supported by the Global Frontier R&D Program and the Center for Advanced Soft Electronics (20110031629) and the Global Research Lab (GRL) Program (2011-0021972) through the National Research Foundation of Korea, funded by the Ministry of Science, ICT & Future, Korea. This research was supported financially by the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (NRF-2014R1A2A1A05004993, NRT-2009-0083540), and by the Inter-University Semiconductor Research Centre (ISRC) at Seoul National University. S. Bee appreciates the financial support from the Korea Institute of Science and Technology (KIST) Institutional Program and the Graphene Materials/Components Development Project (10044366) through the Ministry of Trade, Industry, and Energy (MOTIE), Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectbending cyclesen_US
dc.subjectgraphene barrieren_US
dc.subjectOFETsen_US
dc.subjectwater vapor transmittance rateen_US
dc.titleReduced Water Vapor Transmission Rate of Graphene Gas Barrier Films for Flexible Organic Field-Effect Transistorsen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume9-
dc.identifier.doi10.1021/acsnano.5b01161-
dc.relation.page5818-5824-
dc.relation.journalACS NANO-
dc.contributor.googleauthorChoi, Kyoungjun-
dc.contributor.googleauthorNam, Sooji-
dc.contributor.googleauthorLee, Youngbin-
dc.contributor.googleauthorLee, Mijin-
dc.contributor.googleauthorJang, Jaeyoung-
dc.contributor.googleauthorKim, Sang Jin-
dc.contributor.googleauthorJeong, Yong Jin-
dc.contributor.googleauthorKim, Hyeongkeun-
dc.contributor.googleauthorBae, Sukang-
dc.contributor.googleauthorYoo, Ji-Beom-
dc.relation.code2015000639-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
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COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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