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dc.contributor.author한성환-
dc.date.accessioned2017-01-12T01:58:45Z-
dc.date.available2017-01-12T01:58:45Z-
dc.date.issued2015-06-
dc.identifier.citationADVANCED FUNCTIONAL MATERIALS, v. 25, NO 36, Page. 5739-5747en_US
dc.identifier.issn1616-301X-
dc.identifier.issn1616-3028-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201500964/abstract;jsessionid=752AC1D1514B7AAB422D97B50B488A1B.f02t02-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/25087-
dc.description.abstractNanostructured thin films of metal sulfides (MS) are highly desirable materials for various optoelectronic device applications. However, a general low-temperature protocol that describes deposition of varieties of MS structures, especially in their film form is still not available in literatures. Here, a simple and highly effective general solution-based deposition protocol for highly crystalline and well-defined nanostructured MS thin films from ethanol on variety of conducting and non-conducting substrates is presented. The films display remarkable electronic properties such as high carrier mobility and high conductivity. When NiS thin film deposited on a flexible polyethylene terephthalate (PET) substrate is used as a fluorine doped tin oxide (FTO)-free counter electrode in dye-sensitized solar cells, it exhibits a solar-to-electric power conversion efficiency of 9.27 +/- 0.26% with the highest conversion efficiency as high as 9.50% (vs 8.97 +/- 0.07% exhibited by Pt-electrode). In addition, the NiS film deposited on a Ti-foil has demonstrated an outstanding catalytic activity for the hydrogen and oxygen evolution reactions from water.en_US
dc.description.sponsorshipThis research was supported by the KIST Institutional Program (2E23964) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2013009768).en_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.subjectSENSITIZED SOLAR-CELLSen_US
dc.subjectCHEMICAL BATH DEPOSITIONen_US
dc.subjectATOMIC LAYER DEPOSITIONen_US
dc.subjectFREE COUNTER ELECTRODEen_US
dc.subjectEFFICIENT WATER OXIDATIONen_US
dc.subjectREDUCED GRAPHENE OXIDEen_US
dc.subjectACTIVE EDGE SITESen_US
dc.subjectHIGH-PERFORMANCEen_US
dc.subjectHYDROGEN EVOLUTIONen_US
dc.subjectVAPOR-DEPOSITIONen_US
dc.titleRevisiting Metal Sulfide Semiconductors: A Solution-Based General Protocol for Thin Film Formation, Hall Effect Measurement, and Application Prospectsen_US
dc.typeArticleen_US
dc.relation.no36-
dc.relation.volume25-
dc.identifier.doi10.1002/adfm.201500964-
dc.relation.page5739-5747-
dc.relation.journalADVANCED FUNCTIONAL MATERIALS-
dc.contributor.googleauthorShinde, Dipak V.-
dc.contributor.googleauthorPatil, Supriya A.-
dc.contributor.googleauthorCho, Keumnam-
dc.contributor.googleauthorAhn, Do Young-
dc.contributor.googleauthorShrestha, Nabeen K.-
dc.contributor.googleauthorMane, Rajaram S.-
dc.contributor.googleauthorLee, Joong Kee-
dc.contributor.googleauthorHan, Sung-Hwan-
dc.relation.code2015001465-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.pidshhan-
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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