Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2017-01-09T07:46:54Z | - |
dc.date.available | 2017-01-09T07:46:54Z | - |
dc.date.issued | 2015-05 | - |
dc.identifier.citation | SOLID STATE COMMUNICATIONS, v. 209, Page. 11-14 | en_US |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.issn | 1879-2766 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0038109815000708 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/24990 | - |
dc.description.abstract | Potassium-doped ZnO thin films electrodeposited on indium tin oxide (ITO) coated glass substrates exhibited ferroelectric behavior with a remnant polarization of 0.2 mu C/cm2. Especially, wave forms showing the applied input voltage V-i and output voltage V-o were obtained for Al/ZnO:K/ITO structure, It exhibits a superposition of V-i (input) and V-o (output) signal from Al/ZnO:K/ITO structure with a clear phase shift between the two wave forms which again confirms that the observed ferroelectric hysteresis curve is not related to leaky dielectric materials. The current-voltage characteristics of Al/ZnO:K/ITO structures measured for several cycles revealed bi-stable switching characteristics. The reproducible bi-stable switching characteristics for the mentioned structures had good retention in one particular resistance state. Around one order of switching was realized between low and high resistance states. The switching property thought to be polarization induced originating out from the ferroelectric properties of the potassium doped ZnO thin film. The switching between ZnO:K/ITO interface is assumed to be critical for stability in switching for several cycles. Possible application of this structure in non-volatile memories is explored. (C) 2015 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No.2014-039452), International Research & Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) of Korea (No. 2014-073957) and by the Basic Science Research Program through the NFR funded by MEST (NRF-2014R1A2A2A01007718 and NRF-2014R1A2A1A11053936), and by the Quntum-functional Research Center (QSRC) of Dongguk University. Research funds from Hindustan University through CENCON is gratefully acknowledged. | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.subject | ZnO | en_US |
dc.subject | Ferroelectric property | en_US |
dc.subject | Electrodeposition | en_US |
dc.title | Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories | en_US |
dc.type | Article | en_US |
dc.relation.volume | 209 | - |
dc.identifier.doi | 10.1016/j.ssc.2015.02.019 | - |
dc.relation.page | 11-14 | - |
dc.relation.journal | SOLID STATE COMMUNICATIONS | - |
dc.contributor.googleauthor | Lee, J. W. | - |
dc.contributor.googleauthor | Subramaniam, N. G. | - |
dc.contributor.googleauthor | Kang, T. W. | - |
dc.contributor.googleauthor | Shon, Yoon | - |
dc.contributor.googleauthor | Kim, E. K. | - |
dc.relation.code | 2015001480 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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