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Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2016-12-12T05:14:12Z | - |
| dc.date.available | 2016-12-12T05:14:12Z | - |
| dc.date.issued | 2015-05 | - |
| dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 3, NO 17, Page. 4235-4238 | en_US |
| dc.identifier.issn | 2050-7526 | - |
| dc.identifier.issn | 2050-7534 | - |
| dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2015/TC/C5TC00051C#!divAbstract | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11754/24788 | - |
| dc.description.abstract | We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H-c) of 188 Oe and a remanent magnetization of 102 emu cm(-3) at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm(2) V-1 s(-1) at room temperature. | en_US |
| dc.description.sponsorship | This work was supported in part by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (NRF-2013R1A2A2A01015824, NRF-2014R1A2A2A01007718). We also acknowledge the financial support from the Basic Science Research Program (NRF-2013R1A1A2008875, NRF-2014R1A2A2A01007718) through the National Research Foundation of Korea, funded by the Ministry of Education. This work also was supported by the Mid-Career Researcher Program through a National Research Foundation grant funded by the Ministry of Science and Technology (2012-046999). | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | ROYAL SOC CHEMISTRY | en_US |
| dc.subject | ELECTRIC-FIELD | en_US |
| dc.subject | CARBON | en_US |
| dc.subject | FILMS | en_US |
| dc.subject | GAS | en_US |
| dc.title | Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition | en_US |
| dc.type | Article | en_US |
| dc.relation.no | 17 | - |
| dc.relation.volume | 3 | - |
| dc.identifier.doi | 10.1039/c5tc00051c | - |
| dc.relation.page | 4235-4238 | - |
| dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
| dc.contributor.googleauthor | Park, Chang-Soo | - |
| dc.contributor.googleauthor | Zhao, Yu | - |
| dc.contributor.googleauthor | Shon, Yoon | - |
| dc.contributor.googleauthor | Yoon, Im Taek | - |
| dc.contributor.googleauthor | Lee, Cheol Jin | - |
| dc.contributor.googleauthor | Song, Jin Dong | - |
| dc.contributor.googleauthor | Lee, Haigun | - |
| dc.contributor.googleauthor | Kim, Eun Kyu | - |
| dc.relation.code | 2015001470 | - |
| dc.sector.campus | S | - |
| dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
| dc.sector.department | DEPARTMENT OF PHYSICS | - |
| dc.identifier.pid | ek-kim | - |
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