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dc.contributor.author김은규-
dc.date.accessioned2016-12-12T05:14:12Z-
dc.date.available2016-12-12T05:14:12Z-
dc.date.issued2015-05-
dc.identifier.citationJOURNAL OF MATERIALS CHEMISTRY C, v. 3, NO 17, Page. 4235-4238en_US
dc.identifier.issn2050-7526-
dc.identifier.issn2050-7534-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2015/TC/C5TC00051C#!divAbstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/24788-
dc.description.abstractWe report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H-c) of 188 Oe and a remanent magnetization of 102 emu cm(-3) at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm(2) V-1 s(-1) at room temperature.en_US
dc.description.sponsorshipThis work was supported in part by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (NRF-2013R1A2A2A01015824, NRF-2014R1A2A2A01007718). We also acknowledge the financial support from the Basic Science Research Program (NRF-2013R1A1A2008875, NRF-2014R1A2A2A01007718) through the National Research Foundation of Korea, funded by the Ministry of Education. This work also was supported by the Mid-Career Researcher Program through a National Research Foundation grant funded by the Ministry of Science and Technology (2012-046999).en_US
dc.language.isoenen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectELECTRIC-FIELDen_US
dc.subjectCARBONen_US
dc.subjectFILMSen_US
dc.subjectGASen_US
dc.titleProperties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor depositionen_US
dc.typeArticleen_US
dc.relation.no17-
dc.relation.volume3-
dc.identifier.doi10.1039/c5tc00051c-
dc.relation.page4235-4238-
dc.relation.journalJOURNAL OF MATERIALS CHEMISTRY C-
dc.contributor.googleauthorPark, Chang-Soo-
dc.contributor.googleauthorZhao, Yu-
dc.contributor.googleauthorShon, Yoon-
dc.contributor.googleauthorYoon, Im Taek-
dc.contributor.googleauthorLee, Cheol Jin-
dc.contributor.googleauthorSong, Jin Dong-
dc.contributor.googleauthorLee, Haigun-
dc.contributor.googleauthorKim, Eun Kyu-
dc.relation.code2015001470-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF PHYSICS-
dc.identifier.pidek-kim-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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