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Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Title
Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory
Author
홍진표
Keywords
Resistive switching; Thin film; Graphene; Hexagonal BN; Interfacial property
Issue Date
2015-05
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 589, Page. 188-193
Abstract
The role of the atomic interface in the resistive switching in Al-WO3-Al devices is investigated by inserting metallic graphene or insulating hexagonal BN sheet between the top Al electrode and WO3 film. Clear reversible bipolar-type resistive switching phenomena were observed, regardless of the interface modification. However, endurance and retention properties were affected by the nature of the interface. While the device containing the graphene interface showed significantly improved performance, another device containing the hexagonal BN sheet showed degraded performance. These experimental findings suggest that atomic configuration of the electrode/oxide interface plays a key role in determining the resistive switching characteristics. (C) 2015 Published by Elsevier B.V .
URI
http://www.sciencedirect.com/science/article/pii/S0040609015005246http://hdl.handle.net/20.500.11754/24785
ISSN
0040-6090
DOI
10.1016/j.tsf.2015.05.002
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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