Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2016-12-08T02:20:29Z | - |
dc.date.available | 2016-12-08T02:20:29Z | - |
dc.date.issued | 2015-05 | - |
dc.identifier.citation | ELECTRONIC MATERIALS LETTERS, v. 11, NO 3, Page. 360-365 | en_US |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.issn | 2093-6788 | - |
dc.identifier.uri | http://link.springer.com/article/10.1007%2Fs13391-015-4442-1 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/24747 | - |
dc.description.abstract | Device performance and bias stability of InGaZnO (IGZO) thin film transistors (TFTs) were investigated as a function of post-treatment with the combination of ultra-violet (UV) irradiation and thermal annealing. Under low temperature annealing at 150 degrees C after UV irradiation, the device performance and bias stability of IGZO TFTs were enhanced with field effect mobility of 10.14 cm(2)/Vs and Delta V-th below 0.5 V. The electrical characteristics of IGZO TFTs improved without a change in the physical structure and the origin of enhanced device performance can be explained by the changes of the oxygen coordination and the evolution of the electronic structures, such as the band edge states and band alignment of the Fermi level within the bandgap. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2013R1A1A2A10005186). | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN INST METALS MATERIALS | en_US |
dc.subject | oxide thin film transistor | en_US |
dc.subject | ultra-violet irradiation | en_US |
dc.subject | low temperature process | en_US |
dc.subject | electronic structure | en_US |
dc.title | Low Temperature Processed InGaZnO Oxide Thin Film Transistor Using Ultra-Violet Irradiation | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1007/s13391-015-4442-1 | - |
dc.relation.page | 360-365 | - |
dc.relation.journal | ELECTRONIC MATERIALS LETTERS | - |
dc.contributor.googleauthor | Cho, S. H. | - |
dc.contributor.googleauthor | Choi, M. J. | - |
dc.contributor.googleauthor | Chung, K. B. | - |
dc.contributor.googleauthor | Park, J. S. | - |
dc.relation.code | 2015009149 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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