433 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author홍진표-
dc.date.accessioned2016-10-28T00:27:40Z-
dc.date.available2016-10-28T00:27:40Z-
dc.date.issued2015-04-
dc.identifier.citationCURRENT APPLIED PHYSICS, v. 15, NO 8, Page. 910-914en_US
dc.identifier.issn1567-1739-
dc.identifier.issn1878-1675-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S1567173915001236-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23962-
dc.description.abstractWe report the influence of a heavy Kr gas sputtering process on the electrical and structural features of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFFs). Electrical observation revealed effective reduction of threshold voltage shifts by adapting a simple sputtering process with Kr gas during growth of a-IGZO TFTs. In addition, the application of Kr-gas resulted in a reduction of oxygen vacancies associated with defect sites in the a-IGZO active channel layer. Structural analyses including atomic force microscopy, X-ray reflectivity, Auger electron spectroscopy, and X-ray photoelectron spectroscopy depth profiling were carried out, along with electrical bias stability tests that convincingly confirm progress of heavy Kr gas process-induced features. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis research was supported by a grant, from the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2060350). Also, this work was supported by the Converging Research Center Program funded by the Ministry of Science, ICT & Future Planning (Project no. 2014048814).en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectOxide TFTen_US
dc.subjectIGZOen_US
dc.subjectKr gasen_US
dc.subjectOxygen vacancyen_US
dc.titleEnhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas processen_US
dc.typeArticleen_US
dc.relation.no8-
dc.relation.volume15-
dc.identifier.doi10.1016/j.cap.2015.04.004-
dc.relation.page910-914-
dc.relation.journalCURRENT APPLIED PHYSICS-
dc.contributor.googleauthorKim, Tae Yoon-
dc.contributor.googleauthorKang, Tae Sung-
dc.contributor.googleauthorHong, Jin Pyo-
dc.relation.code2015001919-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF PHYSICS-
dc.identifier.pidjphong-
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE