Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 홍진표 | - |
dc.date.accessioned | 2016-10-28T00:27:40Z | - |
dc.date.available | 2016-10-28T00:27:40Z | - |
dc.date.issued | 2015-04 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v. 15, NO 8, Page. 910-914 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S1567173915001236 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/23962 | - |
dc.description.abstract | We report the influence of a heavy Kr gas sputtering process on the electrical and structural features of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFFs). Electrical observation revealed effective reduction of threshold voltage shifts by adapting a simple sputtering process with Kr gas during growth of a-IGZO TFTs. In addition, the application of Kr-gas resulted in a reduction of oxygen vacancies associated with defect sites in the a-IGZO active channel layer. Structural analyses including atomic force microscopy, X-ray reflectivity, Auger electron spectroscopy, and X-ray photoelectron spectroscopy depth profiling were carried out, along with electrical bias stability tests that convincingly confirm progress of heavy Kr gas process-induced features. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by a grant, from the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2060350). Also, this work was supported by the Converging Research Center Program funded by the Ministry of Science, ICT & Future Planning (Project no. 2014048814). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Oxide TFT | en_US |
dc.subject | IGZO | en_US |
dc.subject | Kr gas | en_US |
dc.subject | Oxygen vacancy | en_US |
dc.title | Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1016/j.cap.2015.04.004 | - |
dc.relation.page | 910-914 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kim, Tae Yoon | - |
dc.contributor.googleauthor | Kang, Tae Sung | - |
dc.contributor.googleauthor | Hong, Jin Pyo | - |
dc.relation.code | 2015001919 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | jphong | - |
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