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dc.contributor.author안진호-
dc.date.accessioned2016-10-21T01:56:13Z-
dc.date.available2016-10-21T01:56:13Z-
dc.date.issued2015-04-
dc.identifier.citationMICROELECTRONIC ENGINEERING, v. 143, NO Special SI, Page. 81-85en_US
dc.identifier.issn0167-9317-
dc.identifier.issn1873-5568-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S016793171500218X-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23897-
dc.description.abstractIn extreme ultraviolet lithography (EUVL), a pellicle is a thin (a few nanometers in scale) protective membrane that can prevent the mask from suffering from defects. However, this thin film can be easily deformed by gravity and other forces. Although the hexagonal-shaped mesh support structure can decrease the stress caused by external pressure, its structural shape can degrade the image quality on the wafer. Therefore, studying the deflection of a free-standing EUV pellicle is needed. We revisited the plate theory and found that a nonlinear deflection term should be added to the deflection equation. The deflection of a 50 nm thick polysilicon pellicle is about 100 mu m for a full-scale (100 mm x 100 mm) pellicle. Previously, researchers have tried to include graphene in multi-layer EUV pellicles in order to enhance the mechanical properties of the film. We found that the addition of graphene did not cause any serious deflection problems. This study shows that a free-standing EUV pellicle without mesh support can be used without any noticeable deflection effect on the pattern fidelity. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the Future Semiconductor Device Technology Development Program (#10045366) funded by the Ministry of Trade, Industry & Energy and the Korea Semiconductor Research Consortium.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectEUVen_US
dc.subjectEUVLen_US
dc.subjectMechanicalen_US
dc.subjectDeflectionen_US
dc.subjectDeformationen_US
dc.subjectPellicleen_US
dc.titleMechanical deflection of a free-standing pellicle for extreme ultraviolet lithographyen_US
dc.typeArticleen_US
dc.relation.noSpecial SI-
dc.relation.volume143-
dc.identifier.doi10.1016/j.mee.2015.04.012-
dc.relation.page81-85-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorPark, Eun-Sang-
dc.contributor.googleauthorShamsi, Zahid Hussain-
dc.contributor.googleauthorKim, Ji-Won-
dc.contributor.googleauthorKim, Dai-Gyoung-
dc.contributor.googleauthorPark, Jin-Goo-
dc.contributor.googleauthorAhn, Jin-Ho-
dc.contributor.googleauthorOh, Hye-Keun-
dc.relation.code2015001922-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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