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dc.contributor.author정재경-
dc.date.accessioned2016-10-19T05:18:12Z-
dc.date.available2016-10-19T05:18:12Z-
dc.date.issued2015-04-
dc.identifier.citationMICROELECTRONIC ENGINEERING, v. 147, Page. 27-30en_US
dc.identifier.issn0167-9317-
dc.identifier.issn1873-5568-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0167931715002725-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23889-
dc.description.abstractWe improved the performance of low-temperature solution-processed thin film transistors (TFTs) by lithium doping of In2O3/ZrO2 gate stacks. Li incorporation into In2O3 reduced interface diffusion of ZrO2 and improved channel mobility. Enhanced crystallization of Li-doped In2O3 thin films as well as the small equivalent oxide thickness of ZrO2 were determined to be key factors in the observed improvement in device performance. An increase in the [Li+]/[In3+] ratio over the optimum value resulted in performance degradation, which we attributed to the formation of higher energy barriers due to grain boundaries. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the Industrial Strategic technology development program funded by the Ministry of Trade, Industry & Energy, Korea through KEIT (10039174). This research was also supported by an Inha University Research Grant.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectSolution-processed TFTsen_US
dc.subjectSolution-processed indium oxideen_US
dc.subjectLi incorporationen_US
dc.subjectLi dopingen_US
dc.titleHigh performance thin film transistors using low-temperature solution-processed Li-incorporated In2O3/ZrO2 stacksen_US
dc.typeArticleen_US
dc.relation.volume147-
dc.identifier.doi10.1016/j.mee.2015.04.060-
dc.relation.page27-30-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorNguyen, Manh-Cuong-
dc.contributor.googleauthorYou, Seung-Won-
dc.contributor.googleauthorTong, Duc-Tai-
dc.contributor.googleauthorBang, Hyun-Joon-
dc.contributor.googleauthorLee, Dong-Hwi-
dc.contributor.googleauthorHasan, Musarrat-
dc.contributor.googleauthorJeong, Jae Kyeong-
dc.contributor.googleauthorYang, Hoichang-
dc.contributor.googleauthorChoi, Rino-
dc.relation.code2015001922-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjkjeong1-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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