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High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

Title
High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application
Author
정재경
Keywords
High-k inorganic dielectric; Solution processed dielectric and channel; High mobility
Issue Date
2015-04
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 589, Page. 90-94
Abstract
This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 degrees C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm(2)/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. (C) 2015 Elsevier B. V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0040609015003806http://hdl.handle.net/20.500.11754/23809
ISSN
0040-6090
DOI
10.1016/j.tsf.2015.04.035
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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