Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최덕균 | - |
dc.date.accessioned | 2016-08-31T00:41:42Z | - |
dc.date.available | 2016-08-31T00:41:42Z | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v. 15, NO 5, Page. 648-653 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S1567173915000632 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/22900 | - |
dc.description.abstract | In this investigation, the carrier concentration gradient between channel and contact region is achieved to improve the Thin film Transistors (TFT) performance by employing annealing at 350 degrees C in forming gas (N-2 + 5% H-2). The contact region is covered with Mo metal and the channel region is only exposed to forming gas to facilitate the diffusion controlled reaction. The TFT using a-IGZO active layer is fabricated in ambient of Ar:O-2 in ratio 60:40 and the conductivity of the order of 10 (-3) S/cm is measured for as-deposited sample. The electrical conductivity of an annealed sample is of the order of 10(2) S/cm. The device performance is determined by measuring merit factors of TFT. The saturation mobility of magnitude 18.5 cm(2)V(-1) s(-1) has been determined for W/L (20/10) device at 15 V drain bias. The extrapolated field effect mobility for a device with channel width (W) 10 mm is 19.3 cm(2)V(-1) s(-1). The on/ off current ratio is 109 and threshold voltage is in the range between 2 and 3 V. The role of annealing on the electronic property of a-IGZO is carried out using X-ray photoelectron spectroscopy (XPS). The valance band cut-off has been approximately shifted to higher binding energy by 1 eV relative to as-deposited sample. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | TFT | en_US |
dc.subject | IGZO | en_US |
dc.subject | Transparent TFT | en_US |
dc.subject | XPS | en_US |
dc.title | The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1016/j.cap.2015.02.017 | - |
dc.relation.page | 648-653 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Kamal, Raj | - |
dc.contributor.googleauthor | Chandravanshi, Piyush | - |
dc.contributor.googleauthor | Choi, Duck-Kyun | - |
dc.contributor.googleauthor | Bobade, Santosh M. | - |
dc.relation.code | 2015001919 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | duck | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.